深圳黃金樹科技有限公司代理國內(nèi)MOSFET，IC 集成電路，橋堆 二三極管 可控硅等電子產(chǎn)品， 產(chǎn)品主要應用于UPS、EPS、逆變電源、工業(yè)控制板、變頻電源、開關(guān)電源、電力操作電源、小家電，新能源，汽車電子等高科技行業(yè)，并致力于推廣供應環(huán)保無鉛的綠色產(chǎn)品。 我們本著“誠信經(jīng)營，互惠互贏”的理念貫穿供應，銷售，服務的始終。我們始終將“創(chuàng)新，進取，誠信合作，品質(zhì)為重，客戶為重，服務至上”作為商務合作發(fā)展的基石，愿我們持續(xù)，共同發(fā)展！深圳黃金樹科技有限公司是國內(nèi)外知名的電子元器件混合分銷商，成立于深圳龍華區(qū)，主要產(chǎn)品有SPM、IGBT、MOSFET、FRD(快恢復）、可控硅、光耦、IC、MCU等。代理品牌有：無錫新潔能（NCE)，江蘇捷捷微（JJM),福斯特（FIRST),臺灣博盛（POTENS)，優(yōu)勢現(xiàn)貨品牌有UTC友順，安森美(ON)，英飛凌(Infineon) ,NXP,ADI,RICHTEK,TI等。聯(lián)系電話：13510537787何小姐 微信同步

我司常期備有FKN4002 SOT23庫存，保證原裝品質(zhì)，假一賠萬。歡迎前來洽談合作。

 FKN4002

N-Ch 40V Fast Switching MOSFETs

Green Device Available ? Super Low Gate Charge ? Excellent Cdv/dt effect decline ? Advanced high cell density Trench technology

BVDSS RDSON ID 40V 32mΩ 5A

The FKN4002 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKN4002 meet the RoHS and Green Product requirement with full function reliability approved.

Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 5 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 4.1 A IDM Pulsed Drain Current2 16 A PD@TA=25℃ Total Power Dissipation3 1.25 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-ambient 1 --- 100 ℃/W RθJC Thermal Resistance Junction-Case1 --- 60 ℃/W

. Data and specifications subject to change without notice. www.fetek.com.tw Ver : A FKN4002 N-Ch 40V Fast Switching MOSFETs 2 Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.032 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=4A --- --- 32 m? VGS=4.5V , ID=3A --- --- 45 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 --- 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4.5 --- mV/℃ IDSS Drain-Source Leakage Current VDS=32V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=32V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=4A --- 12 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.6 --- ? Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=3A --- 5.5 --- Qgs Gate-Source Charge --- 1.25 --- nC Qgd Gate-Drain Charge --- 2.5 --- Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3? ID=1A --- 8.9 --- ns Tr Rise Time --- 2.2 --- Td(off) Turn-Off Delay Time --- 41 --- Tf Fall Time --- 2.7 --- Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 593 --- Coss Output Capacitance --- 76 --- pF Crss Reverse Transfer Capacitance --- 56 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current1,4 VG=VD=0V , Force Current --- --- 5 A ISM Pulsed Source Current2,4 --- --- 16 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation